Samsung and ASML deepen High-NA EUV work for next-generation chips

Samsung Electronics and ASML are expanding their semiconductor manufacturing partnership around High Numerical Aperture extreme-ultraviolet lithography. Samsung will join an industry initiative developing 12-inch photomasks, a significant change from the 6-inch format long used in chip fabrication. The larger masks are expected to improve fab productivity, reduce costs and remove constraints created when patterns must be stitched together.

Samsung also plans to use ASML’s High-NA EUV equipment in high-volume DRAM manufacturing by 2028, which the companies describe as an industry first. Higher-resolution lithography could simplify process steps and extend the path for shrinking memory features. That 2028 target is a roadmap commitment, not a production milestone already achieved, and the partners still need to develop the masks and supporting infrastructure required for the transition.

The agreement connects ASML’s advanced lithography platform with a manufacturer active in memory and contract chip production. AI demand has increased the value of improvements in density, efficiency and manufacturing throughput. Participating in the mask initiative gives Samsung a role in developing the production standard.